2SD1857 TRANSISTOR NPN 120V 2A TO-92 2SD1857L , 4ADET , 4PCS
TAKIM OLARAK TOPLAM 4 ADET GÖNDERİLMEKTEDİR.

TP.VST59.P83 ANAKART LED SÜRÜCÜ TRANSİSTÖRLERİDİR.

2SD1857 NPN EPITAXIAL SILICON TRANSISTOR
 QW-R201-057.L
 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
Collector Power Dissipation
SOT-223
PC
1 (Note 2)
W
TO-126/TO-126S
1.4
W
TO-92
0.625
W
TO-92 NL
0.9
W
TO-251
2
W
Collector Current
IC
2
A
Collector Current
ICP
3
A
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When mounted on a 40×40×0.7mm ceramic board.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=50μA
120
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
120
V
Emitter-Base Breakdown Voltage
BVEBO
IE=50μA
5
V
Collector Cut-Off Current
ICBO
VCB=100V
1
μA
Emitter Cut-Off Current
IEBO
VEB=4V
1
μA
DC Current Transfer Ratio
hFE
VCE=5V, IC=0.1A
82
390
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=/IB=1A/0.1A (Note)
0.4
V
Transition Frequency
fT
VCE=5V, IE= -0.1A, f=30MHz.
80
MHz
Output Capacitance
COB
VCB=10V, IE=0A, f=1MHz (Note)
20
pF